124 0

High photoresponsivity from multilayer MoS2/Si heterojunction diodes formed by vertically stacking

Title
High photoresponsivity from multilayer MoS2/Si heterojunction diodes formed by vertically stacking
Author
김은규
Keywords
HIGH-RESPONSIVITY; HIGH-DETECTIVITY; PHOTOTRANSISTORS; DRIVEN; WS2
Issue Date
2017-09
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v. 122, no. 12, Article no. 124505
Abstract
We investigated a vertically stacked p(+)-n heterojunction diode consisting of a two-dimensional (2D) molybdenum disulfide (MoS2) crystal and a heavily doped p(+)-type Si substrate. The MoS2 flakes are transferred onto p(+)-Si substrates by using a scotch tape-based exfoliation method. The performances of n-MoS2/p(+)-Si diodes are investigated by I-V measurement under light illumination using light emitting diodes with various wavelengths. It appears that multilayer MoS2 has sufficient thickness to absorb incident light from the visible to near-infrared range with a high sensitivity. With the advantages of a simple device structure as well as improved contact quality between the MoS2 and silicon interface, an ideality factor of 1.09 can be achieved. The diodes reveal an ultra-high photoresponsivity of about 980 A/W at a wavelength of 525 nm with a strong dependence on the light wavelength and intensity, while they show a high specific detectivity on the order of 10(9) cm.Hz(1/2/)W from the visible to near infrared spectral ranges. Published by AIP Publishing.
URI
https://aip.scitation.org/doi/10.1063/1.4994740https://repository.hanyang.ac.kr/handle/20.500.11754/115449
ISSN
0021-8979; 1089-7550
DOI
10.1063/1.4994740
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE