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dc.contributor.author박진성-
dc.date.accessioned2019-11-30T03:41:07Z-
dc.date.available2019-11-30T03:41:07Z-
dc.date.issued2017-08-
dc.identifier.citationSCIENCE OF ADVANCED MATERIALS, v. 9, no. 8, page. 1296-1301en_US
dc.identifier.issn1947-2935-
dc.identifier.issn1947-2943-
dc.identifier.urihttps://www.ingentaconnect.com/content/asp/sam/2017/00000009/00000008/art00002-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/115329-
dc.description.abstractWe report in-plane thermoelectric (TE) properties of Al2O3 (AO)/ZnO superlattice films at high temperatures. The films were prepared at 523 K on a 300-nm-thick SiO2/Si substrate by atomic layer deposition (ALD), and their in-plane electrical and TE properties were evaluated. The measurement of the in-plane TE properties such as Seebeck coefficient (S), electrical conductivity (sigma), and thermal conductivity (kappa) of the AO/ZnO superlattice were carried out in the temperature range from 300 to 500 K. The S, sigma, and kappa were found to be approximately -22.3 and -39.9 mu V/K, 856 and 851 (Omega.cm)(-1), and 1.04 and 1.04 W/m . K at 300 K and 500 K, respectively, indicating that sigma and kappa remained unchanged with increasing temperature up to 500 K. In contrast, S linearly increased to similar to 39.9 kappa V/K with increasing temperature. Finally, the in-plane TE figure of merit (ZT) of the superlattice films at 500 K was calculated as similar to 0.013, which is similar to 3.3 times more than that of the AO/ZnO films (ZT similar to 0.004) at 300 K. Our results clearly exhibit that the in-plane TE performance of the AO/ZnO films was significantly enhanced as compared to that of the bulk materials due to the enhanced phonon scattering at the interface of the films and the formation of nanograin columnar structure in the film. We strongly believe that the AO/ZnO superlattice films can be applied to high-temperature TE devices such as cooling and power generation devices.en_US
dc.description.sponsorshipThis study was supported by the Priority Research Centers Program and by the Basic Science Research Program through the National Research Foundation of Korea (NRF), which is funded by the Ministry of Education (2009-0093817, 2016R1A2R1A2B2012909).en_US
dc.language.isoen_USen_US
dc.publisherAMER SCIENTIFIC PUBLISHERSen_US
dc.subjectThermal Conductivityen_US
dc.subjectSeebeck Coefficienten_US
dc.subjectSuperlattice Filmen_US
dc.subject3-omega Techniqueen_US
dc.subjectThermal Transporten_US
dc.subjectAl-Doped ZnO Filmen_US
dc.titleAll In-Plane Thermoelectric Properties of Atomic Layer Deposition-Grown Al2O3/ZnO Superlattice Film in the Temperature Range from 300 to 500 Ken_US
dc.typeArticleen_US
dc.relation.no8-
dc.relation.volume9-
dc.identifier.doi10.1166/sam.2017.3120-
dc.relation.page1296-1301-
dc.relation.journalSCIENCE OF ADVANCED MATERIALS-
dc.contributor.googleauthorPark, No-Won-
dc.contributor.googleauthorAhn, Jay-Young-
dc.contributor.googleauthorCho, Nam-Kyu-
dc.contributor.googleauthorPark, Jin-Seong-
dc.contributor.googleauthorUmar, Ahmad-
dc.contributor.googleauthorLee, Sang-Kwon-
dc.relation.code2017006339-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjsparklime-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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