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All In-Plane Thermoelectric Properties of Atomic Layer Deposition-Grown Al2O3/ZnO Superlattice Film in the Temperature Range from 300 to 500 K

Title
All In-Plane Thermoelectric Properties of Atomic Layer Deposition-Grown Al2O3/ZnO Superlattice Film in the Temperature Range from 300 to 500 K
Author
박진성
Keywords
Thermal Conductivity; Seebeck Coefficient; Superlattice Film; 3-omega Technique; Thermal Transport; Al-Doped ZnO Film
Issue Date
2017-08
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
SCIENCE OF ADVANCED MATERIALS, v. 9, no. 8, page. 1296-1301
Abstract
We report in-plane thermoelectric (TE) properties of Al2O3 (AO)/ZnO superlattice films at high temperatures. The films were prepared at 523 K on a 300-nm-thick SiO2/Si substrate by atomic layer deposition (ALD), and their in-plane electrical and TE properties were evaluated. The measurement of the in-plane TE properties such as Seebeck coefficient (S), electrical conductivity (sigma), and thermal conductivity (kappa) of the AO/ZnO superlattice were carried out in the temperature range from 300 to 500 K. The S, sigma, and kappa were found to be approximately -22.3 and -39.9 mu V/K, 856 and 851 (Omega.cm)(-1), and 1.04 and 1.04 W/m . K at 300 K and 500 K, respectively, indicating that sigma and kappa remained unchanged with increasing temperature up to 500 K. In contrast, S linearly increased to similar to 39.9 kappa V/K with increasing temperature. Finally, the in-plane TE figure of merit (ZT) of the superlattice films at 500 K was calculated as similar to 0.013, which is similar to 3.3 times more than that of the AO/ZnO films (ZT similar to 0.004) at 300 K. Our results clearly exhibit that the in-plane TE performance of the AO/ZnO films was significantly enhanced as compared to that of the bulk materials due to the enhanced phonon scattering at the interface of the films and the formation of nanograin columnar structure in the film. We strongly believe that the AO/ZnO superlattice films can be applied to high-temperature TE devices such as cooling and power generation devices.
URI
https://www.ingentaconnect.com/content/asp/sam/2017/00000009/00000008/art00002https://repository.hanyang.ac.kr/handle/20.500.11754/115329
ISSN
1947-2935; 1947-2943
DOI
10.1166/sam.2017.3120
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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