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Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations

Title
Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations
Author
이승백
Keywords
graphene; transistor; thermal anneal; boron nitride; photoresist
Issue Date
2017-08
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v. 28, no. 37, Article no. 37LT01
Abstract
The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.
URI
https://iopscience.iop.org/article/10.1088/1361-6528/aa8335https://repository.hanyang.ac.kr/handle/20.500.11754/115163
ISSN
0957-4484; 1361-6528
DOI
10.1088/1361-6528/aa8335
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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