Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2019-11-28T07:41:04Z | - |
dc.date.available | 2019-11-28T07:41:04Z | - |
dc.date.issued | 2017-08 | - |
dc.identifier.citation | APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, v. 26, no. 4, page. 86-90 | en_US |
dc.identifier.issn | 2288-6559 | - |
dc.identifier.uri | http://koreascience.or.kr/article/JAKO201724655835967.page | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/115106 | - |
dc.description.abstract | We have reported structural and optical properties of self-assembled InAs/GaAs quantum dot (QD) grown by molecular beam epitaxy with different arsenic to indium flux ratios (V/III ratios). By increasing the V/III ratio from 9 to 160, average diameter and height of the InAs QDs decreased, but areal density of them increased. The InAs QDs grown under V/III ratio of 30 had a highest-aspect-ratio of 0.134 among them grown with other conditions. Optical property of the InAs QD was investigated by the temperature-dependent photoluminescence (PL) and integrated PL. From the temperature dependence PL measurements of InAs QDs, the activation energies of E-a1 and E-a2 for the InAs QDs were obtained 48 +/- 3 meV and 229 +/- 23 meV, respectively. It was considered that the values of E-a1 and E-a2 are corresponded to the energy difference between ground-state and first excited state, and the energy difference between ground-state and wetting layer, respectively. | en_US |
dc.description.sponsorship | This work was supported in part by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) (No. 20163030013380) by of the Republic of Korea. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | KOREAN VACUUM SOC | en_US |
dc.subject | InAs/GaAs | en_US |
dc.subject | Quantum dot | en_US |
dc.subject | and molecular beam epitaxy | en_US |
dc.title | Temperature Dependent Photoluminescence from InAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy | en_US |
dc.type | Article | en_US |
dc.relation.no | 4 | - |
dc.relation.volume | 26 | - |
dc.identifier.doi | 10.5757/ASCT.2017.26.4.86 | - |
dc.relation.page | 86-90 | - |
dc.relation.journal | 한국진공학회지 | - |
dc.contributor.googleauthor | Lee, Kyoung Su | - |
dc.contributor.googleauthor | Oh, Gyujin | - |
dc.contributor.googleauthor | Kim, Eun Kyu | - |
dc.contributor.googleauthor | Song, Jin Dong | - |
dc.relation.code | 2017018874 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
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