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Temperature Dependent Photoluminescence from InAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy

Title
Temperature Dependent Photoluminescence from InAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy
Author
김은규
Keywords
InAs/GaAs; Quantum dot; and molecular beam epitaxy
Issue Date
2017-08
Publisher
KOREAN VACUUM SOC
Citation
APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, v. 26, no. 4, page. 86-90
Abstract
We have reported structural and optical properties of self-assembled InAs/GaAs quantum dot (QD) grown by molecular beam epitaxy with different arsenic to indium flux ratios (V/III ratios). By increasing the V/III ratio from 9 to 160, average diameter and height of the InAs QDs decreased, but areal density of them increased. The InAs QDs grown under V/III ratio of 30 had a highest-aspect-ratio of 0.134 among them grown with other conditions. Optical property of the InAs QD was investigated by the temperature-dependent photoluminescence (PL) and integrated PL. From the temperature dependence PL measurements of InAs QDs, the activation energies of E-a1 and E-a2 for the InAs QDs were obtained 48 +/- 3 meV and 229 +/- 23 meV, respectively. It was considered that the values of E-a1 and E-a2 are corresponded to the energy difference between ground-state and first excited state, and the energy difference between ground-state and wetting layer, respectively.
URI
http://koreascience.or.kr/article/JAKO201724655835967.pagehttps://repository.hanyang.ac.kr/handle/20.500.11754/115106
ISSN
2288-6559
DOI
10.5757/ASCT.2017.26.4.86
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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