Effect of E-Beams Irradiation Dose on the Sensing Properties of Pt-Functionalized Reduced Graphene Oxides Following Annealing of the 6 nm-Thick Pt Layer

Abstract

Pt-functionalized RGO samples were prepared and subsequently irradiated with 2-MeV electron beams (e-beams). The effect of e-beam dose on the structural, electrical, and gas sensing properties of the samples was investigated. E-beam irradiation was found to induce significant microstructural changes in the Pt-functionalized RGO. Measurements of NO2 sensing at room temperature showed that the dose of 100 kGy led to better NO2 sensing properties compared to those of unirradiated sensors. On the other hand, the dose of 500 kGy appeared to be excessive, leading to extensive damage of the RGO structure and a significant reduction in the response to NO2 gas. E-beam irradiation can be beneficial for improving the gas sensing of Pt-functionalized RGO, but its dose needs to be optimized to obtain the best sensing properties.