Mechanical Stress Distribution and the Effects of Process Parameter Changes in Vertical NAND Flash Memory
- Title
- Mechanical Stress Distribution and the Effects of Process Parameter Changes in Vertical NAND Flash Memory
- Author
- 송윤흡
- Keywords
- Vertical NAND Flash; Poly-Si Channel Stress; Taper Angle; Annealing Temperature; Intrinsic Stress
- Issue Date
- 2017-07
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 17, no. 7, page. 5055-5060
- Abstract
- We investigated the stress distribution and electrical characteristics according to changes in the process parameters in a vertical NAND (VNAND) flash cell with a poly-Si channel. We used technology computer-aided design to confirm that process parameters changes affect the stress distribution in a VNAND flash cell and the stress in the poly-Si channel. Also, we found that, as the stress distributions changed, the electrical characteristics depended significantly on the annealing temperature, channel hole angle, and tungsten intrinsic stress in a VNAND flash cell. Thus, the industry needs to develop and apply better process parameters and acquire a better understanding of how the electrical characteristics of a VNAND flash cell depend on those parameters.
- URI
- https://www.ingentaconnect.com/content/asp/jnn/2017/00000017/00000007/art00090;jsessionid=6g7tccss5hn5d.x-ic-live-02https://repository.hanyang.ac.kr/handle/20.500.11754/114975
- ISSN
- 1533-4880; 1533-4899
- DOI
- 10.1166/jnn.2017.13739
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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