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Mechanical Stress Distribution and the Effects of Process Parameter Changes in Vertical NAND Flash Memory

Title
Mechanical Stress Distribution and the Effects of Process Parameter Changes in Vertical NAND Flash Memory
Author
송윤흡
Keywords
Vertical NAND Flash; Poly-Si Channel Stress; Taper Angle; Annealing Temperature; Intrinsic Stress
Issue Date
2017-07
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 17, no. 7, page. 5055-5060
Abstract
We investigated the stress distribution and electrical characteristics according to changes in the process parameters in a vertical NAND (VNAND) flash cell with a poly-Si channel. We used technology computer-aided design to confirm that process parameters changes affect the stress distribution in a VNAND flash cell and the stress in the poly-Si channel. Also, we found that, as the stress distributions changed, the electrical characteristics depended significantly on the annealing temperature, channel hole angle, and tungsten intrinsic stress in a VNAND flash cell. Thus, the industry needs to develop and apply better process parameters and acquire a better understanding of how the electrical characteristics of a VNAND flash cell depend on those parameters.
URI
https://www.ingentaconnect.com/content/asp/jnn/2017/00000017/00000007/art00090;jsessionid=6g7tccss5hn5d.x-ic-live-02https://repository.hanyang.ac.kr/handle/20.500.11754/114975
ISSN
1533-4880; 1533-4899
DOI
10.1166/jnn.2017.13739
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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