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GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications

Title
GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications
Author
송윤흡
Keywords
2DHG; GaSb; Hole mobility; Lattice mismatch; III-V CMOS
Issue Date
2017-07
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v. 17, no. 7, page. 1005-1008
Abstract
We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results. The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm(2)/Vs and high carrier concentration of 4.3 x 10(12)/cm(2) at RT. (C) 2017 Published by Elsevier B. V.
URI
https://www.sciencedirect.com/science/article/pii/S1567173917300937?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/114974
ISSN
1567-1739; 1878-1675
DOI
10.1016/j.cap.2017.03.018
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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