Enhancement of thermoelectric characteristics in AlGaN/GaN films deposited on inverted pyramidal Si surfaces
- Title
- Enhancement of thermoelectric characteristics in AlGaN/GaN films deposited on inverted pyramidal Si surfaces
- Author
- 소홍윤
- Keywords
- 2-DIMENSIONAL ELECTRON-GAS; MOLECULAR-BEAM EPITAXY; PIEZOELECTRIC POLARIZATION; HETEROSTRUCTURES; DISLOCATIONS; MOBILITY; GROWTH; CHARGE; MOVPE; WELL
- Issue Date
- 2017-07
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v. 111, no. 2, Article no. 021902
- Abstract
- In this letter, we demonstrate an engineering strategy to boost thermoelectric power factor via geometry-induced properties of the pyramid structure. Aluminum gallium nitride (AlGaN)/GaN heterostructured films grown on inverted pyramidal silicon (Si) demonstrate higher power factor as compared to those grown on conventional flat Si substrates. We found that the magnitude of the Seebeck coefficient at room temperature increased from approximately 297 mu VK-1 for the flat film to approximately 849 mu VK-1 for the film on inverted pyramidal Si. In addition, the "effective" electrical conductivity of the AlGaN/GaN on the inverted pyramidal structure increased compared to the flat structure, generating an enhancement of thermoelectric power factor. The results demonstrate how manipulation of geometry can be used to achieve better thermoelectric characteristics in a manner that could be scaled to a variety of different material platforms. Published by AIP Publishing.
- URI
- https://aip.scitation.org/doi/10.1063/1.4991969https://repository.hanyang.ac.kr/handle/20.500.11754/114872
- ISSN
- 0003-6951; 1077-3118
- DOI
- 10.1063/1.4991969
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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