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Enhancement of thermoelectric characteristics in AlGaN/GaN films deposited on inverted pyramidal Si surfaces

Title
Enhancement of thermoelectric characteristics in AlGaN/GaN films deposited on inverted pyramidal Si surfaces
Author
소홍윤
Keywords
2-DIMENSIONAL ELECTRON-GAS; MOLECULAR-BEAM EPITAXY; PIEZOELECTRIC POLARIZATION; HETEROSTRUCTURES; DISLOCATIONS; MOBILITY; GROWTH; CHARGE; MOVPE; WELL
Issue Date
2017-07
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v. 111, no. 2, Article no. 021902
Abstract
In this letter, we demonstrate an engineering strategy to boost thermoelectric power factor via geometry-induced properties of the pyramid structure. Aluminum gallium nitride (AlGaN)/GaN heterostructured films grown on inverted pyramidal silicon (Si) demonstrate higher power factor as compared to those grown on conventional flat Si substrates. We found that the magnitude of the Seebeck coefficient at room temperature increased from approximately 297 mu VK-1 for the flat film to approximately 849 mu VK-1 for the film on inverted pyramidal Si. In addition, the "effective" electrical conductivity of the AlGaN/GaN on the inverted pyramidal structure increased compared to the flat structure, generating an enhancement of thermoelectric power factor. The results demonstrate how manipulation of geometry can be used to achieve better thermoelectric characteristics in a manner that could be scaled to a variety of different material platforms. Published by AIP Publishing.
URI
https://aip.scitation.org/doi/10.1063/1.4991969https://repository.hanyang.ac.kr/handle/20.500.11754/114872
ISSN
0003-6951; 1077-3118
DOI
10.1063/1.4991969
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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