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Structural, chemical, and electrical properties of Y2O3 thin films grown by atomic layer deposition with an (iPrCp)2Y(iPr-amd) precursor

Title
Structural, chemical, and electrical properties of Y2O3 thin films grown by atomic layer deposition with an (iPrCp)2Y(iPr-amd) precursor
Author
박인성
Keywords
Y2O3 film; Atomic layer deposition; (iPrCp)(2)Y(iPr-amd); XPS; Leakage current
Issue Date
2017-06
Publisher
ELSEVIER SCI LTD
Citation
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v. 63, page. 279-284
Abstract
Y2O3 thin films were grown by atomic layer deposition (ALD) through a heteroleptic liquid (iPrCp)(2)Y(iPr-amd) precursor at 350 degrees C. The structural and chemical properties of both as-deposited and annealed Y2O3 films at 500 degrees C and 700 degrees C are analyzed by atomic force microscopy for variation in surface roughness, X-ray diffraction for crystalline structure, and X-ray photoelectron spectroscopy for chemical states. The as-deposited Y2O3 film shows the same crystalline orientation along the plane (222), a stoichiometric state, and minimal hydroxylate formation up to 700 degrees C. Being the dielectric layer in the metal-oxide-semiconductor capacitor, the as-deposited ALD-Y2O3 films with liquid (iPrCp)(2)Y(iPr-amd) precursor without any post-deposition annealing show the much lower leakage density than ALD-Y2O3 with solid Y(MeCp)3.
URI
https://www.sciencedirect.com/science/article/pii/S1369800117303566?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/114604
ISSN
1369-8001; 1873-4081
DOI
10.1016/j.mssp.2017.02.031
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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