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Effects of Asymmetric String Structure on Word-Line Interference in the Vertical NAND Flash Memory Devices

Title
Effects of Asymmetric String Structure on Word-Line Interference in the Vertical NAND Flash Memory Devices
Author
김태환
Keywords
Vertical NAND Flash Memory; Word-Line Interference; Poly-Silicon Channel; Charge Trapping Layer; Threshold Voltage Shift
Issue Date
2017-06
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 17, no. 6, page. 4173-4175
Abstract
The vertical NAND flash memory devices with asymmetric string structure were introduced in order to reduce the word-line interference, and their electric characteristics were investigated as functions of the asymmetric factor (AF) by using technology computer-aided design (TCAD) sentaurus simulation tool. The difference in the threshold voltage (V-th) shift of the target cell was decreased with increasing AF; it was 0.435 x 10(-3) V at AF of 0 nm, and 0.009 x 10(-3) V at AF of 40 nm. This reduction of the word-line interference for vertical NAND flash memory devices with an increased AF was explained by the increased average distance between the target cell and the three closest cells located at the adjacent string.
URI
https://www.ingentaconnect.com/content/asp/jnn/2017/00000017/00000006/art00086https://repository.hanyang.ac.kr/handle/20.500.11754/114596
ISSN
1533-4880; 1533-4899
DOI
10.1166/jnn.2017.13425
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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