Effects of Asymmetric String Structure on Word-Line Interference in the Vertical NAND Flash Memory Devices
- Title
- Effects of Asymmetric String Structure on Word-Line Interference in the Vertical NAND Flash Memory Devices
- Author
- 김태환
- Keywords
- Vertical NAND Flash Memory; Word-Line Interference; Poly-Silicon Channel; Charge Trapping Layer; Threshold Voltage Shift
- Issue Date
- 2017-06
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 17, no. 6, page. 4173-4175
- Abstract
- The vertical NAND flash memory devices with asymmetric string structure were introduced in order to reduce the word-line interference, and their electric characteristics were investigated as functions of the asymmetric factor (AF) by using technology computer-aided design (TCAD) sentaurus simulation tool. The difference in the threshold voltage (V-th) shift of the target cell was decreased with increasing AF; it was 0.435 x 10(-3) V at AF of 0 nm, and 0.009 x 10(-3) V at AF of 40 nm. This reduction of the word-line interference for vertical NAND flash memory devices with an increased AF was explained by the increased average distance between the target cell and the three closest cells located at the adjacent string.
- URI
- https://www.ingentaconnect.com/content/asp/jnn/2017/00000017/00000006/art00086https://repository.hanyang.ac.kr/handle/20.500.11754/114596
- ISSN
- 1533-4880; 1533-4899
- DOI
- 10.1166/jnn.2017.13425
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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