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Effect of the Nanoscale Bitline String Thickness on the Electric Characteristics of Vertical NAND Flash Memory Devices

Title
Effect of the Nanoscale Bitline String Thickness on the Electric Characteristics of Vertical NAND Flash Memory Devices
Author
김태환
Keywords
Vertical NAND Flash Memories; Trap Charge Layer; String Thickness; Threshold Voltage
Issue Date
2017-06
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 17, no. 6, page. 4145-4148
Abstract
The effect of the nanoscale bitline string thickness on the electrical characteristics of vertical NAND flash memory devices was investigated. The trapped charge magnitude in the nitride layer increased with increasing a string thickness up to 20 nm. The program characteristics of vertical NAND flash memory devices with various thicknesses of bitline strings were attributed to the distribution of the trap charges in the nitride trap layers. The cell-to-cell interference in vertical NAND flash memory devices with a cell-to-cell distance of 40 nm was not significantly affected by variation in the string thickness. The threshold voltage shift of an optimal memory device with a string thickness of 20 nm was 0.69 V, which was the largest value among the simulated data.
URI
https://www.ingentaconnect.com/content/asp/jnn/2017/00000017/00000006/art00080https://repository.hanyang.ac.kr/handle/20.500.11754/114593
ISBN
10.1166/jnn.2017.13411
ISSN
1533-4880; 1533-4899
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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