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dc.contributor.author조준형-
dc.date.accessioned2019-11-26T02:40:18Z-
dc.date.available2019-11-26T02:40:18Z-
dc.date.issued2017-06-
dc.identifier.citationPHYSICAL REVIEW LETTERS, v. 118, no. 23, Article no. 239601en_US
dc.identifier.issn0031-9007-
dc.identifier.issn1079-7114-
dc.identifier.urihttps://journals.aps.org/prl/abstract/10.1103/PhysRevLett.118.239601-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/114493-
dc.description.sponsorshipWe thank Prof. X. Ren for his help on the EX+cRPA calculations. This work was supported by the National Research Foundation of Korea grant funded by the Korean government (Nos. 2015M3D1A1070639 and 2015R1A2A2A01003248), KISTI supercomputing center through the strategic support program for the supercomputing application research (KSC-2016-C3-0001), and Center for Advanced Computation (CAC) of Korea Institute for Advanced Study. S. W. K. acknowledges support from POSCO TJ Park Foundation.en_US
dc.language.isoen_USen_US
dc.publisherAMER PHYSICAL SOCen_US
dc.subjectResearch Areasen_US
dc.subjectAdsorptionen_US
dc.subjectMetal-insulator transitionen_US
dc.subjectPeierls transitionen_US
dc.subjectSemiconductorsen_US
dc.subjectPhysical Systemsen_US
dc.subject1-dimensional systemsen_US
dc.subjectTechniquesen_US
dc.subjectFirst-principles calculationsen_US
dc.titleComment on "Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces"en_US
dc.typeArticleen_US
dc.relation.no23-
dc.relation.volume118-
dc.identifier.doi10.1103/PhysRevLett.118.239601-
dc.relation.page1-2-
dc.relation.journalPHYSICAL REVIEW LETTERS-
dc.contributor.googleauthorKim, Sun-Woo-
dc.contributor.googleauthorKang, Yoon-Gu-
dc.contributor.googleauthorKim, Hyun-Jung-
dc.contributor.googleauthorCho, Jun-Hyung-
dc.relation.code2017001885-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF NATURAL SCIENCES[S]-
dc.sector.departmentDEPARTMENT OF PHYSICS-
dc.identifier.pidchojh-
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