268 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author박영준-
dc.date.accessioned2019-11-26T02:34:13Z-
dc.date.available2019-11-26T02:34:13Z-
dc.date.issued2017-06-
dc.identifier.citationIEICE ELECTRONICS EXPRESS, v. 14, no. 11, Article no. 20170437en_US
dc.identifier.issn1349-2543-
dc.identifier.urihttps://www.jstage.jst.go.jp/article/elex/14/11/14_14.20170437/_article-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/114487-
dc.description.abstractSatisfying a demand for higher memory capacity is a major problem for computing systems. Conventional solutions are reaching those limits; instead, DRAM/NVM hybrid main memory systems which consist of emerging Non-Volatile Memory for large capacity and DRAM last-level cache for high access speed were proposed for further improvement. However, in these systems, the two device types share limited memory channels/ranks and NVM channels/ranks are often less utilized than DRAM ones. This paper proposes an OBYST (On hit BYpass to STeal bandwidth) technique to improve memory bandwidth by selectively sending read requests that hit on DRAM cache to NVM instead of busy DRAM. We also propose an inter-device request scheduling policy optimized to OBYST. With negligible area overhead, OBYST improves bandwidth, IPC, and EDP by up to 22%, 21%, and 26% over the baseline without bandwidth optimizations, respectively.en_US
dc.description.sponsorshipThis research was supported in part by the Future Semiconductor Device Technology Development Program funded by MOTIE and KSRC (10044735), and Next-Generation Information Computing Development Program and Basic Science Research Program through NRF funded by MSIP (2015M3C4A7065647 and 2015R1C1A1A01053844).en_US
dc.language.isoen_USen_US
dc.publisherIEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENGen_US
dc.subjectmemoryen_US
dc.subjectDRAMen_US
dc.subjectNVMen_US
dc.subjecthybriden_US
dc.subjectcacheen_US
dc.subjectbandwidthen_US
dc.titleSelective DRAM cache bypassing for improving bandwidth on DRAM/NVM hybrid main memory systemsen_US
dc.typeArticleen_US
dc.relation.no11-
dc.relation.volume14-
dc.identifier.doi10.1587/elex.14.20170437-
dc.relation.page1-12-
dc.relation.journalIEICE ELECTRONICS EXPRESS-
dc.contributor.googleauthorRo, Yuhwan-
dc.contributor.googleauthorSung, Minchul-
dc.contributor.googleauthorPark, Yongjun-
dc.contributor.googleauthorAhn, Jung Ho-
dc.relation.code2017010142-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF COMPUTER SCIENCE-
dc.identifier.pidyongjunpark-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > COMPUTER SCIENCE(컴퓨터소프트웨어학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE