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dc.contributor.author박진성-
dc.date.accessioned2019-11-26T02:05:12Z-
dc.date.available2019-11-26T02:05:12Z-
dc.date.issued2017-06-
dc.identifier.citationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v. 35, no. 4, Article no. 041508en_US
dc.identifier.issn0734-2101-
dc.identifier.issn1520-8559-
dc.identifier.urihttps://avs.scitation.org/doi/10.1116/1.4985140-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/114453-
dc.description.abstractSilicon oxide (SiOx) films were synthesized by plasma enhanced atomic layer deposition (PEALD) using di-isopropylaminosilane [SiH3N(C3H7)(2)] as the precursor and an oxygen plasma as the reactant. The layers were characterized with respect to different growth temperatures between 60 and 150 degrees C. The film density and surface roughness values measured by x-ray reflectometry and atomic force microscopy all approached those of thermally grown SiOx. Also, reasonably high breakdown voltages were observed at all deposition temperatures. An interesting phenomenon involves the fact that the SiOx layer deposited at 60 degrees C is most effective as a moisture barrier, as it exhibits the lowest water vapor transmission rate. X-ray photoelectron spectroscopy analyses indicate that the silicon monoxide bonding characteristic becomes more pronounced as the growth temperature decreases. It is conjectured that such a difference in the bonding state renders the surface of the low temperature SiOx films rather hydrophobic, which suppresses the penetration of moisture. The results indicate that low temperature PEALD SiOx films may be suitable for thin film encapsulation applications in mechanical flexible platforms. (C) 2017 American Vacuum Society.en_US
dc.description.sponsorshipThis research was supported by the MOTIE (Ministry of Trade, Industry and Energy), KSRC (Korea Semiconductor Research Consortium, No. 10053098), and KDRC (Korea Display Research Corporation, No. 10052020) support program.en_US
dc.language.isoen_USen_US
dc.publisherA V S AMER INST PHYSICSen_US
dc.subjectGAS-DIFFUSION-BARRIERSen_US
dc.subjectSILICON DIOXIDEen_US
dc.subjectWATER-VAPORen_US
dc.subjectOXIDEen_US
dc.subjectGROWTHen_US
dc.subjectALDen_US
dc.subjectPRECURSORSen_US
dc.subjectDENSITYen_US
dc.subjectOZONEen_US
dc.subjectAL2O3en_US
dc.titleLow temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applicationsen_US
dc.typeArticleen_US
dc.relation.no041508-
dc.relation.volume35-
dc.identifier.doi10.1116/1.4985140-
dc.relation.page1-6-
dc.relation.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-
dc.contributor.googleauthorLee, Young-Soo-
dc.contributor.googleauthorHan, Ju-Hwan-
dc.contributor.googleauthorPark, Jin-Seong-
dc.contributor.googleauthorPark, Jozeph-
dc.relation.code2017001476-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjsparklime-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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