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Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600 degrees C in air

Title
Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600 degrees C in air
Author
소홍윤
Keywords
ELECTRON-MOBILITY TRANSISTORS; HIGH-TEMPERATURE PERFORMANCE; HIGH-K DIELECTRICS; THERMAL-STABILITY; SCHOTTKY CONTACT; OHMIC CONTACTS; N-GAN; GALLIUM NITRIDE; SI SUBSTRATE; HETEROSTRUCTURE
Issue Date
2017-06
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v. 110, no. 25, Article no. 253505
Abstract
In this paper, we describe the use of 50nm atomic layer deposited (ALD) Al2O3 to suppress the interfacial reaction and inter-diffusion between the gate metal and semiconductor interface, to extend the operation limit up to 600 degrees C in air. Suppression of diffusion is verified through Auger electron spectroscopy (AES) depth profiling and X-ray diffraction (XRD) and is further supported with electrical characterization. An ALD Al2O3 thin film (10nm and 50 nm), which functions as a dielectric layer, was inserted between the gate metal (Ni/Au) and heterostructure-based semiconductor material (AlGaN/GaN) to form a metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). This extended the 50nm ALD Al2O3 MIS-HEMT (50-MIS) current-voltage (I-ds-V-ds) and gate leakage (I-g,I-leakage) characteristics up to 600 degrees C. Both, the 10nm ALD Al2O3 MIS-HEMT (10-MIS) and HEMT, failed above 350 degrees C, as evidenced by a sudden increase of approximately 50 times and 5.3 x 10(6) times in I-g,I-leakage, respectively. AES on the HEMT revealed the formation of a Ni-Au alloy and Ni present in the active region. Additionally, XRD showed existence of metal gallides in the HEMT. The 50-MIS enables the operation of AlGaN/GaN based electronics in oxidizing high-temperature environments, by suppressing interfacial reaction and inter-diffusion of the gate metal with the semiconductor. Published by AIP Publishing.
URI
https://aip.scitation.org/doi/10.1063/1.4986910https://repository.hanyang.ac.kr/handle/20.500.11754/114408
ISSN
0003-6951; 1077-3118
DOI
10.1063/1.4986910
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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