Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600 degrees C in air
- Title
- Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600 degrees C in air
- Author
- 소홍윤
- Keywords
- ELECTRON-MOBILITY TRANSISTORS; HIGH-TEMPERATURE PERFORMANCE; HIGH-K DIELECTRICS; THERMAL-STABILITY; SCHOTTKY CONTACT; OHMIC CONTACTS; N-GAN; GALLIUM NITRIDE; SI SUBSTRATE; HETEROSTRUCTURE
- Issue Date
- 2017-06
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v. 110, no. 25, Article no. 253505
- Abstract
- In this paper, we describe the use of 50nm atomic layer deposited (ALD) Al2O3 to suppress the interfacial reaction and inter-diffusion between the gate metal and semiconductor interface, to extend the operation limit up to 600 degrees C in air. Suppression of diffusion is verified through Auger electron spectroscopy (AES) depth profiling and X-ray diffraction (XRD) and is further supported with electrical characterization. An ALD Al2O3 thin film (10nm and 50 nm), which functions as a dielectric layer, was inserted between the gate metal (Ni/Au) and heterostructure-based semiconductor material (AlGaN/GaN) to form a metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). This extended the 50nm ALD Al2O3 MIS-HEMT (50-MIS) current-voltage (I-ds-V-ds) and gate leakage (I-g,I-leakage) characteristics up to 600 degrees C. Both, the 10nm ALD Al2O3 MIS-HEMT (10-MIS) and HEMT, failed above 350 degrees C, as evidenced by a sudden increase of approximately 50 times and 5.3 x 10(6) times in I-g,I-leakage, respectively. AES on the HEMT revealed the formation of a Ni-Au alloy and Ni present in the active region. Additionally, XRD showed existence of metal gallides in the HEMT. The 50-MIS enables the operation of AlGaN/GaN based electronics in oxidizing high-temperature environments, by suppressing interfacial reaction and inter-diffusion of the gate metal with the semiconductor. Published by AIP Publishing.
- URI
- https://aip.scitation.org/doi/10.1063/1.4986910https://repository.hanyang.ac.kr/handle/20.500.11754/114408
- ISSN
- 0003-6951; 1077-3118
- DOI
- 10.1063/1.4986910
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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