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Atomic Layer Deposition of an Indium Gallium Oxide Thin Film for Thin-Film Transistor Applications

Title
Atomic Layer Deposition of an Indium Gallium Oxide Thin Film for Thin-Film Transistor Applications
Author
박진성
Keywords
surface reaction mechanism; gallium-doped indium oxide; oxide semiconductor; TFT; ALD
Issue Date
2017-06
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v. 9, no. 28, page. 23934-23940
Abstract
Indium gallium oxide (IGO) thin films were deposited via atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]indium (InCA-1) and trimethylgallium (TMGa) as indium and gallium precursors, respectively, and hydrogen peroxide as the reactant. To clearly understand the mechanism of multicomponent ALD growth of oxide semiconductor materials, several variations in the precursorreactant deposition cycles were evaluated. Gallium could be doped into the oxide film at 200 C when accompanied by an InCA-1 pulse, and no growth of gallium oxide was observed without the simultaneous deposition of indium oxide. Density functional theory calculations for the initial adsorption of the precursors revealed that chemisorption of TMGa was kinetically hindered on hydroxylated SiOx but was spontaneous on a hydroxylated InOx surface. Moreover, the atomic composition and electrical characteristics, such as carrier concentration and resistivity, of the ALD-IGO film were controllable by adjusting the deposition supercycles, composed of InO and GaO subcycles. Thus, ALD-IGO could be employed to fabricate active layers for thin-film transistors to realize an optimum mobility of 9.45 cm(2)/(V s), a threshold voltage of -1.57 V, and a subthreshold slope of 0.26 V/decade.
URI
https://pubs.acs.org/doi/10.1021/acsami.7b04985https://repository.hanyang.ac.kr/handle/20.500.11754/114388
ISSN
1944-8244; 1944-8252
DOI
10.1021/acsami.7b04985
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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