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dc.contributor.author신동수-
dc.date.accessioned2019-11-25T06:09:23Z-
dc.date.available2019-11-25T06:09:23Z-
dc.date.issued2017-05-
dc.identifier.citationAPPLIED PHYSICS EXPRESS, v. 10, no. 5, Article no. 052101en_US
dc.identifier.issn1882-0778-
dc.identifier.issn1882-0786-
dc.identifier.urihttps://iopscience.iop.org/article/10.7567/APEX.10.052101-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/114152-
dc.description.abstractIn this work, we investigate the carrier recombination dynamics in InGaN-based blue LED devices by analyzing the radiative and nonradiative carrier lifetimes as functions of driving current. To separate the radiative and nonradiative carrier lifetimes, we utilize the information on the internal quantum efficiency (IQE) and differential carrier lifetime. For comparative analysis, the characteristics of the IQE and electroluminescence spectrum are also used. Through measurements and analyses, we demonstrate that the saturation of the radiative recombination rate induced by the phase-space filling in the active volume triggers the increase in nonradiative recombination rate, thus leading to the efficiency droop. (C) 2017 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.titleAnalysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurementen_US
dc.typeArticleen_US
dc.relation.no5-
dc.relation.volume10-
dc.identifier.doi10.7567/APEX.10.052101-
dc.relation.page1-4-
dc.relation.journalAPPLIED PHYSICS EXPRESS-
dc.contributor.googleauthorHan, Dong-Pyo-
dc.contributor.googleauthorShim, Jong-In-
dc.contributor.googleauthorShin, Dong-Soo-
dc.relation.code2017001864-
dc.sector.campusS-
dc.sector.daehakGRADUATE SCHOOL[S]-
dc.sector.departmentDEPARTMENT OF BIONANOTECHNOLOGY-
dc.identifier.piddshin-
dc.identifier.researcherIDF-6402-2010-
dc.identifier.orcidhttp://orcid.org/0000-0002-0863-9138-
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GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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