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Room temperature ferromagnetic and ambipolar behaviors of MoS2 doped by manganese oxide using an electrochemical method

Title
Room temperature ferromagnetic and ambipolar behaviors of MoS2 doped by manganese oxide using an electrochemical method
Author
김은규
Keywords
SINGLE-LAYER MOS2; MONOLAYER MOS2; TRANSISTORS; NANOSHEETS; ATOM
Issue Date
2017-05
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v. 110, no. 22, Article no. 222104
Abstract
We report the room temperature ferromagnetic and ambipolar behaviours of MoS2 thin flakes doped with MnO2 by electrochemical adsorption. The MoS2 thin film was determined to be multilayered over four layers from Raman analysis. The Mn-oxide doped MoS2 has a ferromagnetic hysteresis at room temperature and showed a weak remnant magnetization, 0.02 emu/g. From the gate dependent transfer characteristics of the MoS2 field effect transistor, it appeared that the Mn-oxide doped MoS2 has ambipolar behaviours with field effect mobilities of about 3.7 and 16.3 cm(2)V(-1)s(-1), respectively, for electrons and holes. Published by AIP Publishing.
URI
https://aip.scitation.org/doi/10.1063/1.4984951https://repository.hanyang.ac.kr/handle/20.500.11754/113943
ISSN
0003-6951; 1077-3118
DOI
10.1063/1.4984951
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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