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Tuning the Work Function of Printed Polymer Electrodes by Introducing a Fluorinated Polymer To Enhance the Operational Stability in Bottom-Contact Organic Field-Effect Transistors

Title
Tuning the Work Function of Printed Polymer Electrodes by Introducing a Fluorinated Polymer To Enhance the Operational Stability in Bottom-Contact Organic Field-Effect Transistors
Author
장재영
Keywords
organic field-effect transistors (OFETs); work function tuning; poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS); Nafion; electrohydrodynamic printing; bottom-contact electrodes
Issue Date
2017-04
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v. 9, no. 14, page. 12637-12646
Abstract
Poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) is a promising electrode material for organic electronic devices due to its high conductivity, good mechanical flexibility, and feasibility of easy patterning with various printing methods. The work function of PEDOT:PSS needs to be increased for efficient hole injection, and the addition of a fluorine-containing material has been reported to increase the work function of PEDOT:PSS. However, it remains a challenge to print PEDOT:PSS electrodes while simultaneously tuning their work functions. Here, we report work function tunable PEDOT:PSS/Nafion source/drain electrodes formed by electrohydrodynamic printing technique with PEDOT:PSS/Nafion mixture solutions for highly stable bottom contact organic field-effect transistors (OFETs). The surface properties and work function of the printed electrode can be controlled by varying the Nafion ratio, due to the vertical phase separation of the PEDOT:PSS/ Nafion. The PEDOT:PSS/Nafion electrodes exhibit a low hole injection barrier, which leads to efficient charge carrier injection from the electrode to the semiconductor. As a result, pentacene-based OFETs with PEDOT:PSS/Nafion electrodes show increased charge carrier mobilities of 0.39 cm(2)/(V.s) compared to those of devices with neat PEDOT:PSS electrodes (0.021 cm(2)/(V.s)). Moreover, the gate-bias stress stability of the OFETs is remarkably improved by employing PEDOT:PSS/Nafion electrodes, as demonstrated by a reduction of the threshold voltage shift from -1.84 V to -0.28 V.
URI
https://pubs.acs.org/doi/10.1021/acsami.6b16259https://repository.hanyang.ac.kr/handle/20.500.11754/113718
ISSN
1944-8244
DOI
10.1021/acsami.6b16259
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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