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Three-dimensionally-architectured GaN light emitting crystals

Title
Three-dimensionally-architectured GaN light emitting crystals
Author
박원일
Keywords
LARGE-SCALE SYNTHESIS; VAPOR-PHASE EPITAXY; OPTOELECTRONIC DEVICES; PHOTONIC CRYSTALS; CONTROLLED GROWTH; SURFACE POLARITY; P-GAN; ZNO; NANOSTRUCTURES; GRAPHENE
Issue Date
2017-04
Publisher
ROYAL SOC CHEMISTRY
Citation
CRYSTENGCOMM, v. 19, no. 15, page. 2007-2012
Abstract
We demonstrate the epitaxial growth of three-dimensional (3D) GaN single crystal arrays through metal-organic vapor phase epitaxy (MOVPE) on lattice-matched ZnO templates that were achieved via hydrothermal growth in which we controlled the position, size and morphology of the layer. To prevent collapse of the crystals during MOVPE growth, graphene sheets were employed as a protection/ mask layer, and initial GaN growth was performed at a relatively low temperature under hydrogen-depleted conditions. Temperature-dependent growth behaviors of GaN crystals on diverse types of ZnO templates can facilitate the control of hexagonal crystal shapes including pencil, tent and plate shapes. Furthermore, a 3D light emitting crystal array was demonstrated through subsequent growth of high-quality n-type and p-type GaN layers.
URI
https://pubs.rsc.org/en/content/articlelanding/2017/CE/C7CE00057J#!divAbstracthttps://repository.hanyang.ac.kr/handle/20.500.11754/113711
ISBN
10.1039/c7ce00057j
ISSN
1466-8033
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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