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ZrO2 film prepared by atomic layer deposition using less viscous cocktail CpZr[N(CH3)2]3 /C7H8 precursor and ozone

Title
ZrO2 film prepared by atomic layer deposition using less viscous cocktail CpZr[N(CH3)2]3 /C7H8 precursor and ozone
Author
박인성
Keywords
Atomic layer deposition; Thin film; ZrO2; Cocktail precursor; CpZr(NMe2)(3); Cycloheptatriene
Issue Date
2017-04
Publisher
ELSEVIER SCIENCE SA
Citation
JOURNAL OF ALLOYS AND COMPOUNDS, v. 701, page. 310-315
Abstract
The precursor consists of a mixture of CpZr(NMe2)(3) (Cp = C5H5, Me = CH3) and cycloheptatriene (C7H8), CpZr(NMe2)(3)/C7H8, is introduced as a precursor in the atomic layer deposition (ALD) of zirconium oxide (ZrO2). The cocktail CpZr(NMe2)(3)/C7H8 chemical exhibits a higher vapor pressure of 1.2 torr and a lower viscosity of 7.0 cP at 100 degrees C than the pure CpZr(NMe2)(3). In the ALD of ZrO2 films, CpZr(NMe2)(3)/C7H8 and O-3 act as the metal precursor and oxidant, respectively. Self-limited growth of ZrO2 films occurs after a 2 s pulse of CpZr(NMe2)(3)/C7H8, and a growth rate of 0.8-0.9 angstrom cycle is obtained over a wide temperature range of 250-400 degrees C. ZrO2 film formed at 300 degrees C is stoichiometric with a lower impurity level of carbon and shows a tetragonal polycrystalline phase dominantly. The fabricated TiN/ZrO2/TiN capacitors exhibit compatible capacitance and leakage current properties with a quadratic voltage coefficient, inversely proportional to the dielectric film thickness (t) according to alpha similar to t(-1.8). (C) 2017 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/abs/pii/S092583881634350X?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/113673
ISSN
0925-8388; 1873-4669
DOI
10.1016/j.jallcom.2016.12.420
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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