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Facile synthesis of AlOx dielectrics via mist-CVD based on aqueous solutions

Title
Facile synthesis of AlOx dielectrics via mist-CVD based on aqueous solutions
Author
박진성
Keywords
Mist chemical vapor deposition; Al(acac)(3); Aluminum oxide; Aqueous solution
Issue Date
2017-04
Publisher
ELSEVIER SCI LTD
Citation
CERAMICS INTERNATIONAL, v. 43, no. 12, page. 8932-8937
Abstract
Aluminum oxide (AlOx) thin films were synthesized by mist-chemical vapor deposition (mist-CVD) using aluminum acetylacetonate (Al(acac)(3)) dissolved in an aqueous solvent mixture of acetone and water. Nitrogen gas was used to purge the precursor solution and growth rates between 7.5-13.3 nm/min were achieved at substrate temperatures of 250-350 degrees C. The AlOx layers deposited at temperatures below 350 degrees C exhibit 3-5 at% residual carbon levels, however those grown at 350 degrees C exhibit only 1-2 at% carbon impurity. Reasonable dielectric properties were obtained in the latter, with a dielectric constant (kappa) of similar to 7.0, breakdown field of 9 MV/cm and relatively low leakage current density of similar to 8.3 x10(-10) A/cm(2).
URI
https://www.sciencedirect.com/science/article/pii/S0272884217306351?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/113667
ISSN
0272-8842; 1873-3956
DOI
10.1016/j.ceramint.2017.04.031
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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