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Selective control of electron and hole tunneling in 2D assembly

Title
Selective control of electron and hole tunneling in 2D assembly
Author
김은규
Keywords
FIELD-EFFECT TRANSISTORS; GRAPHENE HETEROSTRUCTURES; BAND-GAP; SEMICONDUCTOR; TEMPERATURE; WS2; HETEROJUNCTION; TRANSITION; DIODES
Issue Date
2017-04
Publisher
AMER ASSOC ADVANCEMENT SCIENCE
Citation
SCIENCE ADVANCES, v. 3, no. 4, Article no. 1602726
Abstract
Recent discoveries in the field of two-dimensional (2D) materials have led to the demonstration of exotic devices. Although they have new potential applications in electronics, thermally activated transport over a metal/semiconductor barrier sets physical subthermionic limitations. The challenge of realizing an innovative transistor geometry that exploits this concern remains. A new class of 2D assembly (namely, "carristor") with a configuration similar to the metal-insulator-semiconductor structure is introduced in this work. Superior functionalities, such as a current rectification ratio of up to 400,000 and a switching ratio of higher than 106 at room temperature, are realized by quantum-mechanical tunneling of majority and minority carriers across the barrier. These carristors have a potential application as the fundamental building block of low-power consumption electronics.
URI
https://advances.sciencemag.org/content/3/4/e1602726https://repository.hanyang.ac.kr/handle/20.500.11754/113646
ISSN
2375-2548
DOI
10.1126/sciadv.1602726
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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