Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2019-11-22T07:17:17Z | - |
dc.date.available | 2019-11-22T07:17:17Z | - |
dc.date.issued | 2017-04 | - |
dc.identifier.citation | NANOTECHNOLOGY, v. 28, no. 19, Article no. 195703 | en_US |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.issn | 1361-6528 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.1088/1361-6528/aa6740 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/113645 | - |
dc.description.abstract | Molybdenum disulfide (MoS2) film fabricated by a liquid exfoliation method has significant potential for various applications, because of its advantages of mass production and lowtemperature processes. In this study, residue-free MoS2 thin films were formed during the liquid exfoliation process and their electrical properties were characterized with an interdigitated electrode. Then, the MoS2 film thickness could be controlled by centrifuge condition in the range of 20. similar to 40 nm, and its carrier concentration and mobility were measured at about 7.36. x. 1016 cm(-3) and 4.67 cm(2). V-1 s(-1), respectively. Detailed analysis on the films was done by atomic force microscopy, Raman spectroscopy, and high-resolution transmission electron microscopy measurements for verifying the film quality. For application of the photovoltaic device, a Au/MoS2/silicon/In junction structure was fabricated, which then showed power conversion efficiency of 1.01% under illumination of 100mWcm(-2). | en_US |
dc.description.sponsorship | This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (NRF-2016R1A2B4011706). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.subject | MoS2 thin film | en_US |
dc.subject | liquid exfoliation | en_US |
dc.subject | residue-free | en_US |
dc.subject | photovoltaic device | en_US |
dc.title | Electrical and photovoltaic properties of residue-free MoS2 thin films by liquid exfoliation method | en_US |
dc.type | Article | en_US |
dc.relation.no | 19 | - |
dc.relation.volume | 28 | - |
dc.identifier.doi | 10.1088/1361-6528/aa6740 | - |
dc.relation.page | 195703-195709 | - |
dc.relation.journal | NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Lee, Seung Kyo | - |
dc.contributor.googleauthor | Chu, Dongil | - |
dc.contributor.googleauthor | Song, Da Ye | - |
dc.contributor.googleauthor | Pak, Sang Woo | - |
dc.contributor.googleauthor | Kim, Eun Kyu | - |
dc.relation.code | 2017001039 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
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