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Electrical and photovoltaic properties of residue-free MoS2 thin films by liquid exfoliation method

Title
Electrical and photovoltaic properties of residue-free MoS2 thin films by liquid exfoliation method
Author
김은규
Keywords
MoS2 thin film; liquid exfoliation; residue-free; photovoltaic device
Issue Date
2017-04
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v. 28, no. 19, Article no. 195703
Abstract
Molybdenum disulfide (MoS2) film fabricated by a liquid exfoliation method has significant potential for various applications, because of its advantages of mass production and lowtemperature processes. In this study, residue-free MoS2 thin films were formed during the liquid exfoliation process and their electrical properties were characterized with an interdigitated electrode. Then, the MoS2 film thickness could be controlled by centrifuge condition in the range of 20. similar to 40 nm, and its carrier concentration and mobility were measured at about 7.36. x. 1016 cm(-3) and 4.67 cm(2). V-1 s(-1), respectively. Detailed analysis on the films was done by atomic force microscopy, Raman spectroscopy, and high-resolution transmission electron microscopy measurements for verifying the film quality. For application of the photovoltaic device, a Au/MoS2/silicon/In junction structure was fabricated, which then showed power conversion efficiency of 1.01% under illumination of 100mWcm(-2).
URI
https://iopscience.iop.org/article/10.1088/1361-6528/aa6740https://repository.hanyang.ac.kr/handle/20.500.11754/113645
ISSN
0957-4484; 1361-6528
DOI
10.1088/1361-6528/aa6740
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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