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Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing

Title
Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing
Author
전형탁
Keywords
SINGLE-LAYER; MOS2; SNS2; TRANSISTORS; GROWTH
Issue Date
2017-04
Publisher
AMER INST PHYSICS
Citation
AIP ADVANCES, v. 7, no. 4, Article no. 045307
Abstract
Tin disulfide (SnS2) has attracted much attention as a two-dimensional (2D) material. A high-quality, low-temperature process for producing 2D materials is required for future electronic devices. Here, we investigate tin disulfide (SnS2) layers deposited via atomic layer deposition (ALD) using tetrakis(dimethylamino) tin (TDMASn) as a Sn precursor and H2S gas as a sulfur source at low temperature (150 degrees C). The crystallinity of SnS2 was improved by H2S gas annealing. We carried out H2S gas annealing at various conditions (250 degrees C, 300 degrees C, 350 degrees C, and using a threestep method). Angle-resolved X-ray photoelectron spectroscopy (ARXPS) results revealed the valence state corresponding to Sn4+ and S2- in the SnS2 annealed with H2S gas. The SnS2 annealed with H2S gas had a hexagonal structure, as measured via X-ray diffraction (XRD) and the clearly out-of-plane (A1g) mode in Raman spectroscopy. The crystallinity of SnS2 was improved after H2S annealing and was confirmed using the XRD full-width at half-maximum (FWHM). In addition, high-resolution transmission electron microscopy (HR-TEM) images indicated a clear layered structure. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(http://creativecommons.org/licenses/by/4.0/).
URI
https://aip.scitation.org/doi/10.1063/1.4982068https://repository.hanyang.ac.kr/handle/20.500.11754/113642
ISSN
2158-3226
DOI
10.1063/1.4982068
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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