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Switching dynamics and modeling of multi-domain Zr-Doped HfO2 ferroelectric thin films

Title
Switching dynamics and modeling of multi-domain Zr-Doped HfO2 ferroelectric thin films
Author
강보수
Keywords
Ferroelectric; Switching dynamics; HfO2; Polarization-electric field curve
Issue Date
2019-04
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v. 19, No. 4, Page. 486-490
Abstract
HfO2-based ferroelectrics have attracted attention as promising materials for advanced memory applications owing to their negative capacitance effect, high scalability, and full-CMOS compatibility. Accordingly, the switching dynamics of HfO2 thin films have been actively discussed and simulated using the Landau-Khalatnikov equation (LK model). Although the simulated results agree with experimental results in many studies, there is a slight dissimilarity near the coercive field in the polarization-electric field curve. For accurate and general modeling, a new model that combines the conventional LK model and Euler's equation was proposed in this work. The model was examined under single-domain and multi-domain conditions. The simulated curves using the Landau-Euler method better fit with measured curves than those using the LK model.
URI
https://www.sciencedirect.com/science/article/pii/S1567173919300458https://repository.hanyang.ac.kr/handle/20.500.11754/113287
ISSN
1567-1739; 1878-1675
DOI
10.1016/j.cap.2019.01.022
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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