Influence of deposition pressure of CuTe electrode on the tantalum oxide-based resistive switching memory

Abstract

The resistive switching characteristics of Pt/TaOx/CuTe devices were investigated with CuTe bottom electrodes deposited under different working pressure. The CuTe bottom electrode was prepared using a magnetron radio-frequency sputtering. The resistance and distribution of HRS were decreased with increasing deposition pressure of CuTe bottom electrode and then the resistance of LRS was increased however the distribution of LRS was unchanged. The CuTe bottom electrode was systematically analyzed to identify the effect of deposition condition on resistive switching behavior. The intermixing between the TaOx layer and CuTe bottom electrode was clearly identified as an active factor causing the variation of resistive switching parameters.