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Rapid growth of NiSx by atomic layer infiltration and its application as an efficient counter electrode for dye-sensitized solar cells

Title
Rapid growth of NiSx by atomic layer infiltration and its application as an efficient counter electrode for dye-sensitized solar cells
Author
김홍범
Keywords
Atomic layer infiltration; Nickel sulfide; Counter electrode; Dye-sensitized solar cell
Issue Date
2019-09
Publisher
ELSEVIER SCIENCE INC
Citation
JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, v. 77, Page. 470-476
Abstract
Nickel sulfide (NiSx) was grown by atomic layer infiltration using bis(dimethylamino-2-methyl-2-butoxo)nickel(II) [Ni(dmamb)(2)] and hydrogen sulfide (H2S) as a metal precursor and a sulfur source. The steady-state growth rate of the film was 3.7 angstrom/cycles at 160-190 degrees C which was much faster compared to those by conventional atomic layer deposition method (<0.7 angstrom/cycles). This nickel sulfide thin films were characterized by taking X-ray photoelectron spectroscopy, scanning electron microscopy, X-ray diffraction, and hall measurements. The deposited films on Si wafer was single-phase polycrystalline with multiple domains. The NiSx film grown on fluorine-doped tin oxide (FPO)-coated glass was applied to a counter electrode in dye-sensitized solar cells, which performed a high catalytic activity for the reduction of I-3(-) to I- and the comparable cell efficiency of 7.12% with cells using conventional Pt-coated FPO counter electrode. (C) 2019 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S1226086X19302333?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/111341
ISSN
1226-086X; 1876-794X
DOI
10.1016/j.jiec.2019.05.013
Appears in Collections:
RESEARCH INSTITUTE[S](부설연구소) > THE RESEARCH INSTITUTE FOR NATURAL SCIENCES(자연과학연구소) > Articles
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