Low-Temperature Gate Oxynitrides Formed by Radical Oxygen/Nitrogen in a Low-Biased High Density Plasma
- Title
- Low-Temperature Gate Oxynitrides Formed by Radical Oxygen/Nitrogen in a Low-Biased High Density Plasma
- Author
- 이정호
- Issue Date
- 2005-04
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 46, No. 4, Page. 1007-1012
- Abstract
- Low-temperature (<= 400 degrees C) ultrathin (similar to 3 nm) gate oxynitrides have been formed, without the need to post-anneal, by using radical oxygen and nitrogen in a low-biased high-density plasma utilizing a unique slot-plane-antenna technique. X-ray photoelectron and secondary-ion mass spectroscopies reveal that the high nitrogen concentrations confined within the bulk of oxynitrides stem mostly from the bonding configuration of Si - N = O-2. Compared to plasma nitrided thermal oxides, plasma oxynitrides show a better efficiency of nitridation along with the improved charge-to-breakdown and interface characteristics, which allows further scaling down of devices.
- URI
- http://www.jkps.or.kr/journal/view.html?uid=6906&vmd=Fullhttps://repository.hanyang.ac.kr/handle/20.500.11754/110385
- ISSN
- 0374-4884; 1976-8524
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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