46 0

Low-Temperature Gate Oxynitrides Formed by Radical Oxygen/Nitrogen in a Low-Biased High Density Plasma

Title
Low-Temperature Gate Oxynitrides Formed by Radical Oxygen/Nitrogen in a Low-Biased High Density Plasma
Author
이정호
Issue Date
2005-04
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 46, No. 4, Page. 1007-1012
Abstract
Low-temperature (<= 400 degrees C) ultrathin (similar to 3 nm) gate oxynitrides have been formed, without the need to post-anneal, by using radical oxygen and nitrogen in a low-biased high-density plasma utilizing a unique slot-plane-antenna technique. X-ray photoelectron and secondary-ion mass spectroscopies reveal that the high nitrogen concentrations confined within the bulk of oxynitrides stem mostly from the bonding configuration of Si - N = O-2. Compared to plasma nitrided thermal oxides, plasma oxynitrides show a better efficiency of nitridation along with the improved charge-to-breakdown and interface characteristics, which allows further scaling down of devices.
URI
http://www.jkps.or.kr/journal/view.html?uid=6906&amp;vmd=Fullhttps://repository.hanyang.ac.kr/handle/20.500.11754/110385
ISSN
0374-4884; 1976-8524
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE