Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2019-09-03T01:25:51Z | - |
dc.date.available | 2019-09-03T01:25:51Z | - |
dc.date.issued | 2019-03 | - |
dc.identifier.citation | CERAMICS INTERNATIONAL, v. 45, NO 4, Page. 5124-5132 | en_US |
dc.identifier.issn | 0272-8842 | - |
dc.identifier.issn | 1873-3956 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0272884218327457?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/110100 | - |
dc.description.abstract | Atomic layer deposition (ALD) of SnO and SnO2 thin films was successfully demonstrated over a wide temperature range of 70300 degrees C using a divalent Sn-precursor, bis(N-ethoxy-2,2-dimethyl propanamido)tin (Sn(edpa)(2)). The regulated growth of the SnO2 and SnO films was realized by employing O-2-plasma and H2O, respectively. Pure SnO2 and SnO films were deposited with negligible C and N contents at all the growth temperatures, and the films exhibited polycrystalline and amorphous structures, respectively. The SnO2 films presented a high transmittance of > 85% in the wavelength range of 400-700 nm and an indirect band gap of 3.6-4.0 eV; meanwhile, the SnO films exhibited a lower transmittance of > 60% and an indirect band gap of 2.9-3.0 eV. The SnO2 films exhibited n-type semiconducting characteristics with carrier concentrations of 8.5 x 10(16)-1.2 x 10(20) cm(-3) and Hall mobilities of 2-26 cm(2)/V s. By employing an alternate ALD growth of SnO and SnO2 films, SnO2/SnO multilayer structures were successfully fabricated at 120 degrees C. The in-situ quadrupole mass spectrometry analysis performed during ALD revealed that the oxidation of chemisorbed Sn-precursor occurs dominantly during the Sn(edpa)(2)/O-2-plasma ALD process, resulting in the production of combustion by-products, whereas the Sn(edpa)(2)/H2O ALD process was governed by a ligand exchange reaction with the maintenance of the original oxidation state of Sn2+. | en_US |
dc.description.sponsorship | This work was supported by Korea Research Institute of Chemical Technology (SI1803, Development of smart chemical materials for IoT device) and by the Research fund provided for a new professor by SeoulTech (Seoul National University of Science and Technology). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCI LTD | en_US |
dc.subject | SnO2 | en_US |
dc.subject | SnO | en_US |
dc.subject | Atomic layer deposition | en_US |
dc.subject | Bis(N-ethoxy-2 2-dimethyl propanamido)tin | en_US |
dc.subject | Quadrupole mass spectrometer | en_US |
dc.title | Phase-controlled SnO2 and SnO growth by atomic layer deposition using Bis (N-ethoxy-2,2-dimethyl propanamido)tin precursor | en_US |
dc.type | Article | en_US |
dc.relation.no | 4 | - |
dc.relation.volume | 45 | - |
dc.identifier.doi | 10.1016/j.ceramint.2018.09.263 | - |
dc.relation.page | 5124-5132 | - |
dc.relation.journal | CERAMICS INTERNATIONAL | - |
dc.contributor.googleauthor | Kim, Hyo Yeon | - |
dc.contributor.googleauthor | Nam, Ji Hyeun | - |
dc.contributor.googleauthor | George, Sheby Mary | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.contributor.googleauthor | Park, Bo Keun | - |
dc.contributor.googleauthor | Kim, Gun Hwan | - |
dc.contributor.googleauthor | Jeon, Dong Ju | - |
dc.contributor.googleauthor | Chung, Taek-Mo | - |
dc.contributor.googleauthor | Han, Jeong Hwan | - |
dc.relation.code | 2019001746 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
dc.identifier.orcid | https://orcid.org/0000-0002-9070-5666 | - |
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