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Deep RIE(reactive ion etching)를 이용한 가스 유량센서 제작

Title
Deep RIE(reactive ion etching)를 이용한 가스 유량센서 제작
Author
안강호
Issue Date
2006-10
Publisher
한국반도체디스플레이기술학회
Citation
2006 한국반도체및디스플레이장비학회:학술대회논문집, Page. 198-201
Abstract
In this paper, we fabricated drag force type and pressure difference type gas flow sensor with dry etching technology which used Deep RIE(reactive ion etching) and etching stop technology which used SOI(silicon-on-insulator). we fabricated four kinds of sensor, which are cantilever, paddle type, diaphragm, and diaphragm with orifice type. Both cantilever and paddle type flow sensors have similar sensitivity as 0.03mV/V kPa. Sensitivity of the fabricated diaphragm and diaphragm with orifice type sensor were relatively high as about 3.5mV/V kPa, 1.5mV/V kPa respectively.
URI
http://www.koreascience.or.kr/article/CFKO200625522706862.pagehttps://repository.hanyang.ac.kr/handle/20.500.11754/108728
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MECHANICAL ENGINEERING(기계공학과) > Articles
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