149 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author김동욱-
dc.date.accessioned2019-07-30T06:50:13Z-
dc.date.available2019-07-30T06:50:13Z-
dc.date.issued2006-05-
dc.identifier.citationNANOTECHNOLOGY, v. 17, No. 11, Page. S327-S331en_US
dc.identifier.issn0957-4484-
dc.identifier.issn1361-6528-
dc.identifier.urihttps://iopscience.iop.org/article/10.1088/0957-4484/17/11/S16/meta-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/107984-
dc.description.abstractWe fabricated dual-gate ZnO nanorod metal?oxide semiconductor field-effect transistors (MOSFETs) where a Si substrate with a 200 nm thick SiO2 layer was used as a bottom-gate and a Au electrode with a 100 nm thick SiO2 layer was used as a top-gate. From current?voltage characteristic curves of the nanorod MOSFETs, the top-gate mode operation exhibited significantly enhanced device characteristics compared with the bottom-gate case. A switch current ON/OFF ratio of the top-gate mode (105?107) was at least one order of magnitude larger than that of the bottom-gate mode (104?106). Normalized transconductance, one of the key transistor parameters, was also drastically increased from 0.34 μS μm-1 for the bottom-gate to 2.4 μS μm-1 for the top-gate mode. The enhanced device performance can be explained in terms of geometric field enhancement and the resulting efficient gating effect for the top-gate mode geometry.en_US
dc.description.sponsorshipThis work was supported by the National Creative Research Initiative Project of the Ministry of Science and Technology.en_US
dc.language.isoen_USen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.subjectNANOWIRE TRANSISTORSen_US
dc.subjectDIELECTRICSen_US
dc.subjectCHANNELen_US
dc.subjectGANen_US
dc.titleFabrication and electrical characteristics of dual-gate ZnO nanorod metal-oxide semiconductor field-effect transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/17/11/S16-
dc.relation.journalNANOTECHNOLOGY-
dc.contributor.googleauthorKim, HJ-
dc.contributor.googleauthorLee, CH-
dc.contributor.googleauthorKim, DW-
dc.contributor.googleauthorYi, GC-
dc.relation.code2007206915-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE & TECHNOLOGY[E]-
dc.sector.departmentDIVISION OF SCIENCE & TECHNOLOGY-
dc.identifier.pidpeterkim-
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > ETC
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE