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Fabrication and electrical characteristics of dual-gate ZnO nanorod metal-oxide semiconductor field-effect transistors

Title
Fabrication and electrical characteristics of dual-gate ZnO nanorod metal-oxide semiconductor field-effect transistors
Author
김동욱
Keywords
NANOWIRE TRANSISTORS; DIELECTRICS; CHANNEL; GAN
Issue Date
2006-05
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v. 17, No. 11, Page. S327-S331
Abstract
We fabricated dual-gate ZnO nanorod metal?oxide semiconductor field-effect transistors (MOSFETs) where a Si substrate with a 200 nm thick SiO2 layer was used as a bottom-gate and a Au electrode with a 100 nm thick SiO2 layer was used as a top-gate. From current?voltage characteristic curves of the nanorod MOSFETs, the top-gate mode operation exhibited significantly enhanced device characteristics compared with the bottom-gate case. A switch current ON/OFF ratio of the top-gate mode (105?107) was at least one order of magnitude larger than that of the bottom-gate mode (104?106). Normalized transconductance, one of the key transistor parameters, was also drastically increased from 0.34 μS μm-1 for the bottom-gate to 2.4 μS μm-1 for the top-gate mode. The enhanced device performance can be explained in terms of geometric field enhancement and the resulting efficient gating effect for the top-gate mode geometry.
URI
https://iopscience.iop.org/article/10.1088/0957-4484/17/11/S16/metahttps://repository.hanyang.ac.kr/handle/20.500.11754/107984
ISSN
0957-4484; 1361-6528
DOI
10.1088/0957-4484/17/11/S16
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > ETC
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