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WAFER-LEVEL TRANSFER OF THERMO-PIEZOELECTRIC Si3N4 CANTILEVER ARRAY ON A CMOS CIRCUIT FOR HIGH DENSITY PROBE-BASED DATA STORAGE

Title
WAFER-LEVEL TRANSFER OF THERMO-PIEZOELECTRIC Si3N4 CANTILEVER ARRAY ON A CMOS CIRCUIT FOR HIGH DENSITY PROBE-BASED DATA STORAGE
Author
이선영
Issue Date
2006-04
Publisher
IEEE
Citation
19th IEEE International Conference on Micro Electro Mechanical Systems, Page. 922-925
Abstract
In this research, a wafer-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride (Si3N 4) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric SisN4 cantilevers. The thermo-piezoelectric Si3N4 cantilever arrays were fabricated with a conventional p-type silicon wafer instead of a SOI wafer. Furthermore, we have developed a wafer-level cantilever transfer process, which requires only one step of cantilever transfer process to integrate the CMOS circuit with the cantilevers. Using this process, we have fabricated a single thermo-piezoelectric Si3N4 cantilever, and recorded 65nm data bits on a PMMA film. And we have successfully applied this method to transfer 34×34 thermo-piezoelectric Si3N4 cantilever arrays on a CMOS wafer. Finally, We obtained reading signals from one of the cantilevers.
URI
https://ieeexplore.ieee.org/abstract/document/1627951https://repository.hanyang.ac.kr/handle/20.500.11754/107845
ISSN
1084-6999
DOI
10.1109/MEMSYS.2006.1627951
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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