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Formation Principle of Interfacial Voids in a Porous Anodic Alumina Template on a Si Wafer

Title
Formation Principle of Interfacial Voids in a Porous Anodic Alumina Template on a Si Wafer
Author
이정호
Keywords
Aluminum; Anodization; Silicon; Nanopore array; Nanowire; Barrier layer
Issue Date
2007-12
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 51, Page. 1863~1866
Abstract
A porous anodic alumina (PAA) template on a Si wafer enables high-density, size-controlled nanowire arrays, which are then vertically integrated over wafer-scale areas to fabricate nanodevices, such as field-effect-transistors and sensors. The presence of interfacial voids between the alumina film and the Si substrate has been reported, but the principle of void formation remains poorly understood. We report that the alumina transformation of the Al metal remaining when the barrier layer of nanopores touches the substrate nucleates the interfacial voids so as to accommodate the stresses of volume expansion without devastating the pore arrays.
URI
http://www.jkps.or.kr/journal/view.html?uid=9007&vmd=Fullhttps://repository.hanyang.ac.kr/handle/20.500.11754/107514
ISSN
0374-4884; 1976-8524
DOI
10.3938/jkps.51.1863
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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