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Two series oxide resistors applicable to high speed and high density nonvolatile memory

Title
Two series oxide resistors applicable to high speed and high density nonvolatile memory
Author
강보수
Keywords
METAL-INSULATOR-TRANSITION; THIN-FILMS; NIO FILMS
Issue Date
2007-11
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED MATERIALS, v. 19, No. 22, Page. 3919-3923
Abstract
A memory cell consisting of a Pt/VO2/ Pt switch element and a Pt/NiO/Pt memory element connected in series. By applying a voltage higher than V-th of 0.6 V, the switch element reaches the on state and the cell can be accessed. Since reset and set voltages are higher than V-th, information can be written by simply applying an appropriate voltage to a selected cell. By applying a voltage lower than V-th to the other cells, we can keep the other cells in the off state and prevent interference between the selected cell and the others.
URI
https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.200700251https://repository.hanyang.ac.kr/handle/20.500.11754/107289
ISSN
0935-9648
DOI
10.1002/adma.200700251
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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