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FTIR Analysis of PZT damage of wafer-level transfer of thermo-piezoelectric Si3N4 cantilevers on the CMOS-wafer for nano data storage applications

Title
FTIR Analysis of PZT damage of wafer-level transfer of thermo-piezoelectric Si3N4 cantilevers on the CMOS-wafer for nano data storage applications
Author
이선영
Issue Date
2007-11
Publisher
ROYAL SWEDISH ACAD SCIENCES
Citation
PHYSICA SCRIPTA, v. T129, Page. 213-217
Abstract
Degradation of lead zirconate titanate (PZT) during wafer level bonding of thermo-piezoelectric cantilevers with a CMOS-wafer was investigated. It was found that the polyimide film which serves as a height adjustment during wafer level bonding between cantilevers and the CMOS-wafer caused significant damage in the PZT sensor when polyimide was coated entirely on the PZT capacitor followed by heating to 300 degrees C for the bonding process. Fourier transform infrared spectroscopy (FTIR) was used to analyze the reaction product that caused PZT capacitor damage. Three different types of samples were analyzed using FTIR: a sample with coated polyimide only, a sample with a PZT capacitor with no polyimide exposed and a sample with a PZT capacitor where the polyimide has been coated, heated and then removed. NH2 or NH3+ peaks from the sample with the polyimide exposed PZT capacitor were found and these peaks were not detected on the sample with the PZT capacitor or on the polyimide coated sample only. These hydrogen ions contained in the NH2 or NH3 stretch during heating can lead to hydrogen atmosphere annealing which can attack PZT significantly. FTIR analysis therefore confirmed that polyimide reacted with the PZT capacitor to damage its piezoelectric properties.
URI
https://iopscience.iop.org/article/10.1088/0031-8949/2007/T129/048/metahttps://repository.hanyang.ac.kr/handle/20.500.11754/107244
ISSN
0031-8949; 1402-4896
DOI
10.1088/0031-8949/2007/T129/048
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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