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Investigation of PZT damage during wafer-level bonding of thermo -piezoelectric cantilevers with CMOS wafers for probe-based data storage

Title
Investigation of PZT damage during wafer-level bonding of thermo -piezoelectric cantilevers with CMOS wafers for probe-based data storage
Author
이선영
Keywords
Lead zirconate titanate (PZT) capacitor; Thermo-piezoelectric cantilevers; Polyimide; PZT degradation; Hysteresis curve
Issue Date
2007-10
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 51, No. 4, Page. 1374~1377
Abstract
Lead zirconate titanate (PZT) degradation during wafer level bonding of thermo-piezoelectric cantilevers with CMOS wafers was investigated for probe-based data storage. We found that the polyimide film which serves as a height adjustment during wafer level bonding between cantilevers and CMOS wafers, caused significant damage in the PZT sensor when the polyimide was coated entirely on the PZT capacitor. With polyimide being hydrogen-rich, Pt served as an active catalyst to decompose H-2 molecules to atomic hydrogen during the bonding process. However, for the sample with a polyimide coating only on the top electrode, degradation was minimized. Therefore, PZT damage was minimized successfully by optimizing the polyimide-coated area during integration.
URI
http://www.jkps.or.kr/journal/view.html?uid=8913&vmd=Fullhttps://repository.hanyang.ac.kr/handle/20.500.11754/107194
ISSN
0374-4884; 1976-8524
DOI
10.3938/jkps.51.1374
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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