Resistance Switching in Electroformed Pt/FeOx/Pt Structures

Abstract

We report studies of resistance switching characteristics of Pt/FeOx/Pt structures, of which FeOx thin films were formed by thermal oxidation of Fe layers. X-ray diffraction (XRD) studies showed that less oxidized Fe3O4 phase disappeared and alpha-Fe2O3 phase was formed at annealing temperatures >= 400 degrees C. The electroforming process, usually occurring at 7 similar to 10 V, increased the conductivity of the structure significantly(> 10(2)) and brought About reversible resistance switching under unipolar bias voltage. We successfully demonstrated that the FeO, films exhibited reliable memory switching behaviors.