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dc.contributor.author김동욱-
dc.date.accessioned2019-07-02T01:50:25Z-
dc.date.available2019-07-02T01:50:25Z-
dc.date.issued2007-10-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 51, Page. S96-S99en_US
dc.identifier.issn0374-4884-
dc.identifier.issn1976-8524-
dc.identifier.urihttp://www.jkps.or.kr/journal/view.html?uid=9050&vmd=Full-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/106984-
dc.description.abstractWe report studies of resistance switching characteristics of Pt/FeOx/Pt structures, of which FeOx thin films were formed by thermal oxidation of Fe layers. X-ray diffraction (XRD) studies showed that less oxidized Fe3O4 phase disappeared and alpha-Fe2O3 phase was formed at annealing temperatures >= 400 degrees C. The electroforming process, usually occurring at 7 similar to 10 V, increased the conductivity of the structure significantly(> 10(2)) and brought About reversible resistance switching under unipolar bias voltage. We successfully demonstrated that the FeO, films exhibited reliable memory switching behaviors.en_US
dc.language.isoen_USen_US
dc.publisherKOREAN PHYSICAL SOCen_US
dc.subjectresistance switchingen_US
dc.subjectiron oxidesen_US
dc.subjectelectroformingen_US
dc.titleResistance Switching in Electroformed Pt/FeOx/Pt Structuresen_US
dc.typeArticleen_US
dc.identifier.doi10.3938/jkps.51.96-
dc.relation.journalJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.googleauthorLee, S. B.-
dc.contributor.googleauthorChae, S. C.-
dc.contributor.googleauthorChang, S. H.-
dc.contributor.googleauthorLiu, C.-
dc.contributor.googleauthorJung, C. U.-
dc.contributor.googleauthorSeo, S.-
dc.contributor.googleauthorKim, D. -W.-
dc.relation.code2007205987-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE & TECHNOLOGY[E]-
dc.sector.departmentDIVISION OF SCIENCE & TECHNOLOGY-
dc.identifier.pidpeterkim-
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > ETC
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