Reversible Resistance Switching Behaviors of Pt/NiO/Pt Structures

Abstract

We report on studies of the resistance switching behaviors of Pt/NiO/Pt structures, whose 60-nm-thick NiO thin films were formed by the thermal oxidation of Ni films. X-ray diffraction studies showed that a single-phase NiO film was obtained and that its lattice constant was very close to that of the bulk. Current–voltage characteristics exhibited reproducible resistance switching under a unipolar bias voltage. The switching voltage and current for the thermally grown NiO thin films did not show large variation in the oxidation temperature range, 350–550 °C.