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Reversible Resistance Switching Behaviors of Pt/NiO/Pt Structures

Title
Reversible Resistance Switching Behaviors of Pt/NiO/Pt Structures
Author
김동욱
Keywords
NiO; thermal oxidation; resistance switching
Issue Date
2007-08
Publisher
INST PURE APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v. 46, No. 8A, Page. 5205-5207
Abstract
We report on studies of the resistance switching behaviors of Pt/NiO/Pt structures, whose 60-nm-thick NiO thin films were formed by the thermal oxidation of Ni films. X-ray diffraction studies showed that a single-phase NiO film was obtained and that its lattice constant was very close to that of the bulk. Current–voltage characteristics exhibited reproducible resistance switching under a unipolar bias voltage. The switching voltage and current for the thermally grown NiO thin films did not show large variation in the oxidation temperature range, 350–550 °C.
URI
https://iopscience.iop.org/article/10.1143/JJAP.46.5205https://repository.hanyang.ac.kr/handle/20.500.11754/106846
ISSN
0021-4922
DOI
10.1143/JJAP.46.5205
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > ETC
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