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dc.contributor.author김동욱-
dc.date.accessioned2019-06-03T05:07:59Z-
dc.date.available2019-06-03T05:07:59Z-
dc.date.issued2007-01-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v. 90, No. 1, Article no. 011906en_US
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.urihttps://aip.scitation.org/doi/abs/10.1063/1.2428489-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/106209-
dc.description.abstractThe initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) substrates were investigated. High-resolution x-ray diffraction and transmission electron microscopy studies revealed that the initial growth behavior and the microstructure of the films were significantly dependent on the growth parameters employed. ZnO films grown at 700 degrees C with an O-2 partial pressure of 20 mTorr initiated in a columnar growth mode and contained two types of domains. These domains were in plane orientated either ZnO[11 (2) over bar0]parallel to Al2O3[10 (1) over bar0] or ZnO[10 (1) over bar0]parallel to Al2O3[10 (1) over bar0] and were surrounded by highly defective domain boundaries with threading dislocations. ZnO films grown at 800 degrees C with 1 mTorr O-2 showed a two-dimensional layered growth with only one in-plane epitaxial relationship, ZnO[11 (2) over bar0]parallel to Al2O3[10 (1) over bar0]. Most of the defects in the layered grown films were basal plane stacking faults near the interface between the ZnO and the substrate. The mechanism of formation of the 30 degrees-twisted domains with the in-plane orientation of ZnO[10 (1) over bar0]parallel to Al2O3[10 (1) over bar0] is discussed.en_US
dc.language.isoen_USen_US
dc.publisherAMER INST PHYSICSen_US
dc.subjectX-RAY-SCATTERINGen_US
dc.subjectSTRUCTURAL EVOLUTIONen_US
dc.subjectENERGIESen_US
dc.subjectSTRAINen_US
dc.titleInitial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2428489-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.contributor.googleauthorLiu, C.-
dc.contributor.googleauthorChang, S. H.-
dc.contributor.googleauthorNoh, T. W.-
dc.contributor.googleauthorAbouzaid, M.-
dc.contributor.googleauthorRuterana, P.-
dc.contributor.googleauthorLee, H. H.-
dc.contributor.googleauthorKim, D. -W.-
dc.contributor.googleauthorChung, J. -S.-
dc.relation.code2007200866-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE & TECHNOLOGY[E]-
dc.sector.departmentDIVISION OF SCIENCE & TECHNOLOGY-
dc.identifier.pidpeterkim-
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > ETC
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