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A Process for Topographically Selective Deposition on 3D Nanostructures by Ion Implantation

Title
A Process for Topographically Selective Deposition on 3D Nanostructures by Ion Implantation
Author
김우희
Keywords
3D nanostructure; area-selective deposition; atomic layer deposition; geometric selectivity; ion implantation
Issue Date
2016-04
Publisher
AMER CHEMICAL SOC
Citation
ACS NANO, v. 10, No. 4, Page. 4451-4458
Abstract
Area-selective atomic layer deposition (AS-ALD) is attracting increasing interest because of its ability to enable both continued dimensional scaling and accurate pattern placement for next-generation nanoelectronics. Here we report a strategy for depositing material onto three-dimensional (3D) nanostructures with topographic selectivity using an ALD process with the aid of an ultrathin hydrophobic surface layer. Using ion implantation of fluorocarbons (CFx), a hydrophobic interfacial layer is formed, which in turn causes significant retardation of nucleation during ALD. We demonstrate the process for Pt ALD on both blanket and 2D patterned substrates. We extend the process to 3D structures, demonstrating that this method can achieve selective anisotropic deposition, selectively inhibiting Pt deposition on deactivated horizontal regions while ensuring that only vertical surfaces are decorated during ALD. The efficacy of the approach for metal oxide ALD also shows promise, though further optimization of the implantation conditions is required. The present work advances practical applications that require area-selective coating of surfaces in a variety of 3D nanostructures according to their topographical orientation.
URI
https://pubs.acs.org/doi/abs/10.1021/acsnano.6b00094https://repository.hanyang.ac.kr/handle/20.500.11754/105905
ISSN
1936-0851; 1936-086X
DOI
10.1021/acsnano.6b00094
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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