Highly-sensitive, gate-tunable, room-temperature mid-infrared photodetection based on graphene-Bi2Se3 heterostructure
- Title
- Highly-sensitive, gate-tunable, room-temperature mid-infrared photodetection based on graphene-Bi2Se3 heterostructure
- Author
- 심상완
- Keywords
- graphene; heterostructure; mid-infrared photodetection; photodetectors; photogating effect; topological insulators
- Issue Date
- 2017-02
- Publisher
- AMER CHEMICAL SOC
- Citation
- ACS PHOTONICS, v. 4, No.. 3, page. 482-488
- Abstract
- Broadband detection of mid-infrared (IR) photons extends to advanced optoelectronic applications such as imaging, sensing, and telecommunications. While graphene offers an attractive platform for broadband visible/IR photodetection, previous efforts to improve its responsivity, for example, by integrating light-absorbing colloids or waveguide or antenna fabrication, were achieved at the cost of reduced photon detection bandwidth. In this work, we demonstrate room-temperature operation of a novel mid-IR photodetector based on a graphene-Bi2Se3 heterostructure showing broadband detection and high responsivity (1.97 and 8.18 A/W at mid-and near-IR, respectively), in which simultaneous improvement of the spectral range and responsivity is achieved via exploiting broadband absorption of mid-1R and IR photons in a small-band-gap Bi2Se3 topological insulator and efficient hot carrier separation and strong photogating across the Bi2Se3/graphene interface. With sufficient room for further improvement by interface engineering, our results show a promising route to realize ultrabroadband, high-responsivity hot-carrier optoelectronics at room temperature.
- URI
- https://pubs.acs.org/doi/abs/10.1021/acsphotonics.6b00972https://repository.hanyang.ac.kr/handle/20.500.11754/105895
- ISSN
- 2330-4022
- DOI
- 10.1021/acsphotonics.6b00972
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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