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Effects of Nb nanopin electrode on resistive random-access memory switching characteristics of NiO thin films

Title
Effects of Nb nanopin electrode on resistive random-access memory switching characteristics of NiO thin films
Author
김우희
Keywords
TRANSITION-METAL OXIDES; MECHANISMS; DEVICES; ENHANCEMENT; CHALLENGES; RESISTANCE; GRAPHENE; ARRAY
Issue Date
2018-06
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v. 10, No. 28, Page. 13443-13448
Abstract
We report the effects of bottom electrode shapes on resistive random-access memory (RRAM) devices composed of Nb (bottom electrode)/NiO (dielectric)/Nb (top electrode) structures. By adopting a nano-fabrication process using an anodic aluminum oxide (AAO) nanotemplate, a well-aligned Nb nanopin array bottom electrode was formed on the surface of a Si substrate. For comparison, a Nb thin film was employed as a different type of bottom electrode. Then, a NiO thin film dielectric was prepared on both the Nb bottom electrodes via a spin coating method, followed by Nb sputtering for the Nb top electrode. Both the RRAM devices with Nb nanopin and thin film bottom electrodes exhibited typical unipolar resistive switching behavior. However, a lower SET/RESET voltage was observed for the Nb nanopin electrode compared to the Nb thin film electrode by virtue of an enhanced electric field induced by the nanopin-shaped electrode. More significantly, on the basis of endurance and retention characteristics, the Nb nanopin electrode played a key role in minimizing the dispersion of the low- and high-resistance state currents and the variation in the SET/RESET voltage by developing more-concise conducting filaments in the conducting path. Therefore, we foresee that this approach can provide an insight into the optimal design of RRAM devices.
URI
https://pubs.rsc.org/en/Content/ArticleLanding/2018/NR/C8NR02986E#!divAbstracthttps://repository.hanyang.ac.kr/handle/20.500.11754/105823
ISSN
2040-3364; 2040-3372
DOI
10.1039/c8nr02986e
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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