49 0

Field-Effect Device Using Quasi-Two-Dimensional Electron Gas in Mass-Producible Atomic-Layer-Deposited Al2O3/TiO2 Ultrathin (˂10 nm) Film Heterostructures

Title
Field-Effect Device Using Quasi-Two-Dimensional Electron Gas in Mass-Producible Atomic-Layer-Deposited Al2O3/TiO2 Ultrathin (˂10 nm) Film Heterostructures
Author
박태주
Keywords
two-dimensional electron gas; atomic layer deposition; field-effect transistor; titanium oxide; aluminum oxide
Issue Date
2018-10
Publisher
AMER CHEMICAL SOC
Citation
ACS NANO, v. 12, No. 10, Page. 10403-10409
Abstract
We report the field-effect transistors using quasi-two-dimensional electron gas generated at an ultrathin (similar to 10 nm) Al2O3/TiO2 heterostructure interface grown via atomic layer deposition (ALD) on a SiO2/Si substrate without using a single crystal substrate. The 2DEG at the Al2O3/TiO2 interface originates from oxygen vacancies generated at the surface of the TiO2 bottom layer during ALD of the Al2O3 overlayer. High-density electrons (similar to 10(14) cm(-2)) are confined within a similar to 2.2 nm distance from the Al2O3/TiO2 interface, resulting in a high on-current of similar to 12 mu A/mu m. The ultrathin TiO2 bottom layer is easy to fully deplete, allowing an extremely low off-current, a high on/off current ratio over 10(8), and a low subthreshold swing of similar to 100 mV/decade. Via the implementation of ALD, a mature thin-film process can facilitate mass production as well as three-dimensional integration of the devices.
URI
https://pubs.acs.org/doi/abs/10.1021/acsnano.8b05891https://repository.hanyang.ac.kr/handle/20.500.11754/105744
ISSN
1936-0851
DOI
10.1021/acsnano.8b05891
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE