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High-performance broadband heterojunction photodetectors based on multilayered PtSe2 directly grown on a Si substrate

Title
High-performance broadband heterojunction photodetectors based on multilayered PtSe2 directly grown on a Si substrate
Author
이정호
Keywords
TRANSITION-METAL DICHALCOGENIDES; NEAR-INFRARED PHOTODETECTORS; MOLECULAR-BEAM EPITAXY; SELF-DRIVEN; HIGH-DETECTIVITY; 2-DIMENSIONAL MATERIALS; SCHOTTKY JUNCTION; GRAPHENE; OPTOELECTRONICS; DEVICES
Issue Date
2018-07
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v. 10, No. 32, Page. 15285-15293
Abstract
Two-dimensional group-10 transition metal dichalcogenides have recently attracted increasing research interest because of their unique electronic and optoelectronic properties. Herein, we present vertical hybrid heterojunctions of multilayered PtSe2 and Si, which take advantage of large-scale homogeneous PtSe2 films grown directly on Si substrates. These heterojunctions show obvious rectifying behavior and a pronounced photovoltaic effect, enabling them to function as self-driven photodetectors operating at zero bias. The photodetectors can operate in both photovoltage and photocurrent modes, with responsivity values as high as 5.26 x 10 6 V W-1 and 520 mA W-1 at 808 nm, respectively. The I-light/I-dark ratio, specific detectivity, and response speed are 1.5 x 10(5), 3.26 x 10(13) Jones, and 55.3/170.5 mu s, respectively. Furthermore, the heterojunctions are highly sensitive in a broad spectral region ranging from deep ultraviolet to near-infrared (NIR) (200-1550 nm). Because of the strong MR light absorption of PtSe2, the heterojunctions exhibit photocurrent responsivities of 33.25 and 0.57 mA W-1 at telecommunication wavelengths of 1310 and 1550 nm, respectively. Considering the excellent performance of the PtSe2/Si heterojunctions, they are highly suitable for application in high-performance broadband photodetectors. The generality of the above results also signifies that the proposed in situ synthesis method has great potential for future large-scale optoelectronic device integration.
URI
https://pubs.rsc.org/en/content/articlehtml/2018/nr/c8nr04004dhttps://repository.hanyang.ac.kr/handle/20.500.11754/105620
ISSN
2040-3364
DOI
10.1039/c8nr04004d
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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